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| BLF6G20-230PRN Power LDMOS transistor Rev. 01 -- 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 28 PL(AV) (W) 50 Gp (dB) 16.5 D (%) 29.5 ACPR (dBc) -35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: N Average output power = 50 W N Power gain = 16.5 dB (typ) N Efficiency = 29.5 % N ACPR = -35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G20-230PRN Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange 3. Ordering information Table 3. Ordering information Package Na me BLF6G20-230PRN Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tcase Tj Parameter drain-source voltage gate-source voltage storage temperature case temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 +150 150 225 Unit V V C C C BLF6G20-230PRN_1 (c) NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 -- 2 December 2008 2 of 7 NXP Semiconductors BLF6G20-230PRN Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL(AV) = 50 W Typ 0.38 Unit K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS gate-source threshold voltage gate-source quiescent voltage drain leakage current Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 144 mA VDS = 32 V; ID = 800 mA VGS = 0 V VDS = 28 V VDS = 60 V IDSX IGSS gfs RDS(on) drain cut-off current gate leakage current forward transconductance drain-source on-state resistance VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 7.2 A VGS = VGS(th) + 3.75 V; ID = 5 A 25 10 0.1 3 5 300 A A A nA S Min 65 Typ Max 2.3 2.45 Unit V V V 1.575 1.9 1.725 2.1 0.165 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol Gp RLin D ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 50 W PL(AV) = 50 W PL(AV) = 50 W PL(AV) = 50 W Min Typ -10 -35 Max Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO output peak-to-average ratio Conditions PL(AV) = 115 W; at 0.01 % probability on CCDF Min Typ Max Unit 4.3 dB BLF6G20-230PRN_1 (c) NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 -- 2 December 2008 3 of 7 NXP Semiconductors BLF6G20-230PRN Power LDMOS transistor 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 41.28 10.29 0.25 41.02 10.03 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 0.210 0.465 0.006 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 0.156 0.455 0.003 1.218 1.219 1.615 0.395 OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 Fig 1. Package outline SOT539A (c) NXP B.V. 2008. All rights reserved. BLF6G20-230PRN_1 Objective data sheet Rev. 01 -- 2 December 2008 4 of 7 NXP Semiconductors BLF6G20-230PRN Power LDMOS transistor 9. Abbreviations Table 9. Acronym 3GPP CCDF DPCH LDMOS LDMOST PAR PDPCH RF W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Wideband Code Division Multiple Access 10. Revision history Table 10. Revision history Release date 20081202 Data sheet status Objective data sheet Change notice Supersedes Document ID BLF6G20-230PRN_1 BLF6G20-230PRN_1 (c) NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 -- 2 December 2008 5 of 7 NXP Semiconductors BLF6G20-230PRN Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G20-230PRN_1 (c) NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 -- 2 December 2008 6 of 7 NXP Semiconductors BLF6G20-230PRN Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 2 2 2 2 3 3 3 4 5 5 6 6 6 6 6 6 7 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 December 2008 Document identifier: BLF6G20-230PRN_1 |
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